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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUW131H DESCRIPTION *High Switching Speed *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 450V APPLICATIONS *Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCES VCEO VEBO IC ICM IB B PARAMETER Collector- Emitter Voltage (VBE= 0) Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25 Junction Temperature Storage Temperature Range MAX 850 450 6 8 16 6 12 125 200 -65~200 UNIT V V V A A A A W IBM PC Tj Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.0 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(sat) ICEV IEBO hFE COB PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance CONDITIONS IC= 0.1A ; IB= 0; L= 10mH IC= 3A; IB= 0.3A B BUW131H MIN 450 TYP. MAX UNIT V 1.0 2.5 1.5 0.25 1.5 1 7 200 V V V mA mA IC= 5A; IB= 0.5A B IC= 5A; IB= 0.5A B VCE=VCESMmax;VBE=-1.5V VCE=VCESMmax;VBE=-1.5V;TJ=100 VEB= 6V; IC= 0 IC= 5A ; VCE= 5V IE= 0 ; VCB= 10V; ftest= 1kHz pF Switching Times , Resistive Load ton tstg tf Turn-On Time Storage Time Fall Time IC= 3A ;IB1= 0.3A;IB2= -0.6A 0.4 1.5 0.1 s s s isc Websitewww.iscsemi.cn |
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